AlN:Er薄膜在不同退火温度下应力诱导的微观结构演变  

Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature

作　　者：阳明明[1,2] 莫亚娟 王晓丹[3] 曾雄辉[1] 刘雪华[1] 黄俊[1] 张纪才[1] 王建峰[1] 徐科[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123 [2]上海大学材料科学与工程学院,上海200444 [3]苏州科技学院物理科学与技术系,苏州215009

出　　处：《无机材料学报》2016年第3期285-290,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(61306004;51002179;11247023;51272270;61274127;61474133);江苏省自然科学基金(BK20130263;BK2012630);国家基础研究计划973项目(2012CB619305);中科院引进国外杰出技术人才项目;苏州纳米科技协同创新中心资金~~

摘　　要：以透射电镜中的弱束衍衬成像和高分辨相位衬度成像为主要表征手段,辅以X射线衍射、拉曼光谱等测试方法,对Al N:Er样品在退火过程中的微观结构演变过程进行了深入分析。在透射电镜观察下,Er离子注入的Al N样品在退火前存在三个区域:区域Ⅰ为自表面以下约30 nm深度;区域Ⅱ为区域I以下约50 nm深度;区域Ⅲ为区域Ⅱ以下的部分,其中区域Ⅱ为损伤最为严重的区域。在较低的温度(如1025℃时)退火后,区域Ⅰ消失;但1200℃退火后,又重新可以观察到区域Ⅰ。结合TEM、XRD和Raman测试结果,从损伤恢复和应力释放的角度对上述实验现象进行了理论解释:由于Er离子半径和基体原子半径的差异,在区域Ⅱ中引入较大的应力;在1025℃退火时,来自区域Ⅱ的应力作用于区域Ⅰ,导致区域I发生大的晶格扭曲,和区域II合并,用TEM观察不到;在1200℃退火时,应力在表面释放,区域I的晶格扭曲修复,从而用TEM可重新观察到。The microstructure evolution of Al N： Er during thermal treatment was mainly characterized by weak beam diffraction-contrast imaging and high resolution phase-contrast imaging of the transmission electron microscopy（TEM）, which was also supported by X-ray diffraction（XRD） and Raman spectroscopy. Three regions could be observed in the TEM for the implanted samples. The region I is about 30 nm in depth below the surface, the region II is about 50 nm in depth under the region I and is the worst damaged area, and the region III is the area below the reigion II. At relatively low annealing temperature, such as 1025℃, the region I disappears. However, this area can be observed again after annealing at 1200℃. Based on the results of XRD, Raman and TEM, the interesting experiment phenomenon are explained on the view of damage recovery and stress releasing. There is a large stress in the region II due to the large radius difference between Er ions and Ga ions. In the annealing process at 1025℃, the region I is affected by the stress from region II, the lattice distortion in region I is produced. Therefore, the region I is observed as region II under TEM observation. In the annealing process at 1200 ℃, the stress in the region I is released from the surface, the lattice distortion is removed and the region I is observed again under TEM.

关 键 词：AlN:Er 离子注入 微观结构演变 

分 类 号：O474[理学—半导体物理]