形核密度与氢等离子体处理对沉积CVD金刚石薄膜的影响  

Influence of Nucleation Density and Hydrogen Plasma Treatment on Chemical Vapor Deposition of Diamond Films

作　　者：翁俊[1] 刘繁[1] 孙祁[1] 王小安[1] 黄平[1] 周璐[1] 吴骁[1] 汪建华[1] 

机构地区：[1]武汉工程大学材料科学与工程学院湖北省等离子体化学与新材料重点实验室,湖北武汉430074

出　　处：《真空电子技术》2016年第3期35-39,共5页Vacuum Electronics

基　　金：国家自然科学基金(No.11175137);湖北省教育厅项目(Q20151517)

摘　　要：本实验利用2kW微波等离子体化学气相沉积(CVD)设备,系统探究了不同形核密度和氢等离子体处理对CVD金刚石膜沉积的影响。利用扫描电镜、X射线衍射和Raman光谱对样品的形貌、结构和质量进行了表征,结果表明:形核密度越低,金刚石膜的晶粒尺寸越大,且随着时间的延长,较低形核密度和高形核密度下沉积的金刚石膜能分别获得<110>取向和<111>。当给予合适的生长环境,不同形核密度下沉积的金刚石膜均能获得较高的质量。因此,金刚石厚膜的沉积,可以考虑在低形核密度的环境下进行。另外,在相对较低的基片温度和腔体气压下进行氢等离子体处理,可以在保证金刚石膜表面CHx含量变化不大的情况下,充分减少金刚石膜表面或亚表面的非金刚石相,进一步地提高金刚石膜的质量。The effects of nucleation diamond thin films were systematically density and hydrogen plasma treatment on the deposition of CVD researched in a 2.0 kW MPCVD apparatus. The results obtained from SEM, XRD and Raman spectra show that the decrease of the nucleation density is benefit to increase the crystal size. With the extended deposition time, preferred 〈111〉 and 〈110〉 orientation of CVD diamond films can be deposited with high and low nucleation density, respectively. When appropriate growth condition is given, high quality diamond films can be prepared no matter with high or low nucleation densi- ty. Therefore, it is feasible to deposit high quality diamond thick films with relative low nucleation densi- ty. Moreover, Hz plasma treatment at relative low substrate temperature and chamber pressure can further improve the quality by decreasing sp2 phases in surface and sub-surface of diamond film, when keep the CH~ content in the surface of diamond films change slightly.

关 键 词：金刚石膜 形核密度 氢等离子体 微波等离子体 化学气相沉积 

分 类 号：TQ164[化学工程—高温制品工业]