n-on-p锑化铟薄膜的液相外延生长  

Liquid Phase Epitaxy of n-on-p InSb Film

作　　者：李忠良[1] 陈建才[1] 叶薇[1] 李增寿[1] 刘世能[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2016年第7期577-580,共4页Infrared Technology

摘　　要：用水平开管液相外延技术在锑化铟衬底上用富铟锑化铟母液生长锑化铟薄膜材料,薄膜材料具有n-on-p结构,衬底为p型层,掺Ge,浓度1×10^(15)~5×10^(16) cm^(-3);薄膜为n型层,掺Te,薄膜面积20 cm×25 cm,厚度2~3μm,表面平整度±0.2μm,浓度1×10^(17)~5×10^(18) cm^(-3)。n-on-p锑化铟薄膜材料能满足制作的中波红外焦平面器件要求。InSb film has been grown from In-rich solution in open-tube sliding-boat LPE system on InSb substrates. It has n on p structure. The substrate is Ge-doped with impurity concentration ranges from 1×10^15 to 5×10^16 cm^-3, and the InSb epitaxial layer is grown upon the 20cm×25 cm p-InSb substrate, which has the thickness of 2-3μm with the surface flatness and the net donor concentration ranges from 1× 10^17 to 5×10^18 cm^-3. The results show that epilayer can satisfy the fabrication of focus plane arrays.

关 键 词：n-on-p 锑化铟 液相外延 

分 类 号：O742[理学—晶体学] O75