L波段大功率开关的研制  

Design of L-band Power Switch

作　　者：孟向俊 杨磊[1] 黄贞松[1] 宋艳[1] 许庆[1] 

机构地区：[1]南京电子器件研究所,南京211111

出　　处：《电子与封装》2016年第7期34-38,共5页Electronics & Packaging

摘　　要：根据高功率、低插损、高隔离的要求,选择串并联电路形式对这些指标做折衷处理。采用多芯片模块组装工艺,把PIN管芯片通过焊料烧结在氮化铝基板上。相比于传统基板材料,氮化铝陶瓷基板导热性能优良,无需加装散热器,使电路尺寸减小,制作简单。实现在L波段上,通过峰值功率500 W、占空比30%的脉冲信号,插入损耗小于0.8 d B,隔离度大于35 d B。Due to the strict requirements of high power, low insertion loss and high isolation, the paper makes a compromise of these parameters by selecting series/parallel circuits. Based on multi-chip module assembly technologies, the P1N diode chip is bonded on A1N ceramic substrate by highly conductive adhesive. Comparingwith conventional substrate materials, A1N has good thermal conductivity whicheliminatesthe heat sinkand reduces circuit size. The A1N-basedL-band power switch is capable of endure the pulse signal with 500 W peak power and 30% duty ratio and achieves 0.8 dB or less insertion loss and 35 dB or higher isolation.

关 键 词：多芯片模块 氮化铝陶瓷基板 大功率开关 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]