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作 者:李凤英[1,2] 刘玉岭[1,2] 牛新环[1,2] 孙鸣[1,2]
机构地区:[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130
出 处:《微纳电子技术》2016年第10期702-706,共5页Micronanoelectronic Technology
基 金:国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(E2013202247)
摘 要:研发了一种新型的碱性抛光液,用于提高Si晶圆的抛光速率以及循环使用时的高速率稳定性。分析了FA/OⅡ型螯合剂与KOH调节剂对Si晶圆抛光速率的影响,单因素实验发现:当FA/OⅡ型螯合剂调节抛光液的pH值时,随着pH值增大,Si晶圆的抛光速率先增大后减少;当KOH调节剂调节抛光液的pH值时,Si晶圆的抛光速率随pH值增加先增大后减少。新型碱性抛光液的组成包括单因素实验中抛光速率最佳的FA/OⅡ型螯合剂与KOH调节剂,以及硅溶胶研磨料。在对Si晶圆进行抛光过程中,新型碱性抛光液要稀释30倍。结果显示,抛光速率可高达900 nm/min,相对于国际上通用的抛光液,抛光速率提高了近5%。此外,对新型碱性抛光液进行循环抛光实验,发现该新型碱性抛光液可以实现16次高速率抛光。A novel alkaline slurry was developed to improve the polishing rate of Si wafer and high rate stability while recycling.The novel alkaline slurry consists of the colloidal silica abrasive material,FA/O Ⅱchelating agent and KOH regulator.The effects of the FA/O Ⅱchelating agent and KOH regulators on the polishing rate of Si wafer were analyzed.It is found in the single factor experiment that when the FA/O Ⅱchelating agent is used to adjust the pH value of the slurry,the polishing rate of Si wafer firstly increases and then decreases with the increase of the pH value.When the KOH regulator is used to adjust the pH value of the slurry,the polishing rate of Si wafer firstly increases and then decreases with the increase of pH value.The compositions of the novel alkaline slurry are the colloidal silica abrasive material,FA/O Ⅱ chelating agent and KOH regulator when the polishing rate is the best in the single factor experiment.The novel alkaline slurry was diluted 30-fold during the polishing process of Si wafer.The result shows that the polishing rate is up to 900 nm/min,and increases by nearly 5%compared with the international general polishing liquid.In addition,the cycle polishing experiment was carried out by using the novel alkaline slurry.The result shows that the novel alkaline slurry can realize 16-fold high rate polishing.
关 键 词:碱性抛光液 Si晶圆 FA/OⅡ型螯合剂 抛光速率 硅溶胶研磨料
分 类 号:TN305.2[电子电信—物理电子学]
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