1200V SiC MOSFET晶体管的高温可靠性研究  

High-temperature Reliability of 1 200 V SiC Power MOSFETs

作　　者：邓小川[1] 陈茜茜[1] 王弋宇 申华军[3] 唐亚超 高云斌 

机构地区：[1]电子科技大学,四川成都610054 [2]新型功率半导体器件国家重点实验室,湖南株洲412001 [3]中国科学院微电子研究所,北京100029

出　　处：《大功率变流技术》2016年第5期62-64,70,共4页HIGH POWER CONVERTER TECHNOLOGY

基　　金：国家科技重大专项子课题(编号2013ZX02305-002);广东省自然科学基金(编号2015A030313875)

摘　　要：高温可靠性是目前限制SiC MOSFET晶体管高温应用的关键问题之一。本文介绍了基于国内碳化硅器件工艺平台研制的1 200 V SiC MOSFET器件的直流特性,并通过高温栅偏(HTGB)和高温反偏(HTRB)试验对器件高温可靠性进行测试分析。试验结果表明:所研制的1 200 V SiC MOSFET器件在经过168 h的HTGB和HTRB可靠性试验后,所有测试器件的击穿电压>1 200 V,阈值电压偏移量<15%,导通电阻偏移量<15%,显示出优良的器件鲁棒性,也初步证明了国产SiC MOSFET器件的设计、工艺及其研制的可行性。High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic pr℃ess platform, and then its high-temperature reliability was analyzed after high temperature gate-bias test（HTGB） and high temperature reversebias test（HTRB）. The experimental results indicated that after 168 hours HTGB and HTRB tests, breakdown voltage of the fabricated samples is more than 1 200 V and the variations of threshold voltage and on-resistance are less than 15% respectively, suggesting good robustness of these devices. It also confirms the feasibility of the design, pr℃ess and fabrication of domestic 1 200 V SiC MOSFETs.

关 键 词：SIC MOSFET 高温栅偏 高温反偏 可靠性 

分 类 号：TN306[电子电信—物理电子学] TN304.24