Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices  

作　　者：Qian-Qiong Wang Hong-Xia Liu Shu-Peng Chen Shu-Long Wang Chen-Xi Fei Dong-Dong Zhao 

机构地区：[1]Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics,Xidian University, Xi'an 710071, China

出　　处：《Nuclear Science and Techniques》2016年第5期193-199,共7页核技术（英文）

基　　金：supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007);the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)

摘　　要：This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors （nMOSFETs） in sil-icon-on-insulator （SOI） technology. Using the subthreshold separation technology, the factor causing the threshold voltage shift was divided into two parts： trapped oxide charges and interface states, the effects of which are pre-sented under irradiation. Furthermore, by analyzing the data, the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower. Additionally, the influence of the dose rate effects on threshold voltage is discussed. The research results show that the threshold voltage shift is more significant in low dose rate conditions, even for a low dose of 100 krad（Si）. The degeneration value of threshold voltage is 23.4 % and 58.0 % for the front-gate and the back-gate at the low dose rate, respectively.

关 键 词：阈值电压漂移 总剂量辐照 NMOS器件 SOI 金属氧化物半导体场效应晶体管 H型 低剂量率 分离技术 

分 类 号：TN386[电子电信—物理电子学]