CCD新型遮光层工艺技术研究  

Study on Process of Novel Light-shield in CCD

作　　者：向鹏飞[1] 姜华男[1] 曲鹏程[1] 杨修伟[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2016年第5期694-697,共4页Semiconductor Optoelectronics

摘　　要：针对内线转移CCD金属铝遮光技术存在的漏光问题,对比了不同难熔金属材料的遮光性能,选择漏光率较低的氮化钛金属作为新型遮光层材料。研究了不同气体配比、不同射频功率和腔体压力对氮化钛刻蚀选择比、条宽控制等参数的影响。通过优化工艺参数,获得了适合于刻蚀氮化钛遮光层的工艺条件。For the problem of light leak in interline transfer CCD At light-shading technology, the light-shading performance of different refractory metal materials were compared, based on which Titanium nitride with low light-leaking was chosen as the new shading layer material. The effects of different etching gas ratio, RF power and chamber pressure on the parameters such as etching selectivity and stripe width control were researched. By optimizing process parameters, optimal process conditions for TiN light-shield etching were obtained.

关 键 词：氮化钛 遮光层 刻蚀 选择比 

分 类 号：TN386.5[电子电信—物理电子学]