多电压集成电路的瞬时剂量率辐射效应试验研究  

Experimental research of transient dose rate effect on multiple voltage integrated circuits

作　　者：李同德[1] 赵元富[1,2] 王亮[1] 郑宏超[1] 舒磊[2] 刘家齐[1] 于春青[1] Li Tongde Zhao Yuanfu Wang Liang Zheng Hongchao Shu Lei Liu Jiaqi Yu Chunqing(Beijing Mieroeleetronies Technology Institute, Beijing 100076, China Harbin Institute of Technology, Harbin 150001 , China)

机构地区：[1]北京微电子技术研究所,北京100076 [2]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《电子技术应用》2017年第1期6-9,共4页Application of Electronic Technique

摘　　要：瞬时剂量率辐射会对集成电路产生不同程度的影响,产生扰动、翻转、闩锁甚至烧毁等问题。针对一款具有两种电源电压的0.18μm SRAM电路,利用"强光一号"装置进行了瞬时γ剂量率辐射试验,研究了SRAM电路的内核电压和IO电压受扰动后的恢复时间,并对试验结果进行了分析。高电源电压扰动恢复时间优于低电源电压扰动恢复时间,该发现对多电压集成电路瞬时剂量率效应的评估和加固具有指导意义。Transient dose rate radiation causes various degrees of impact on integrated circuits, disturbance, upset, latch-up and burnout are generated. Transientγ dose rate irradiation experiment of a two kinds of power supply voltage SRAM circuits based on ＂Qiangguang-I＂ accelerator is studied. The recovery time of core voltage and the recovery time of IO voltage are researched; the recovery time of IO voltage is superior to core voltage. The experiment results are analyzed. The finding has certain guidance signif- icance for the assessment and hardening of transient dose rate effect on multiple voltage integrated circuits.

关 键 词：瞬时剂量率 多电压 γ脉冲 扰动 

分 类 号：TN432[电子电信—微电子学与固体电子学]