碳化硅薄膜的力学性能理论研究  

Theoretical Study on Mechanical Properties of SiC Films

作　　者：何国堂 刘斌[1] 戴姜平 谢自力[1] 韩平[1] 张荣[1] 王守旭[2] 黄旼[2] 朱健[2] 

机构地区：[1]南京大学电子科学与工程学院,江苏省光电信息功能材料重点实验室,南京210093 [2]南京电子器件研究所,南京210016

出　　处：《半导体光电》2016年第6期805-808,841,共5页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2016YFB0400100);国家“863”计划项目(2014AA032605,2015AA033305);国家自然科学基金项目(61605071,61674076,61274003,61422401,51461135002,61334009);江苏省自然科学基金项目(BY2013077,BK20141320,BE2015111);固态照明与节能电子学协同创新中心项目;江苏省重点学科资助计划项目;南京大学扬州光电研究院研发基金项目

摘　　要：目前,SiC薄膜在极端苛刻环境下的力学性质尚不明确,相关力学参数仍需进一步研究。文章采用模拟软件ANSYS对微尺寸的SiC薄膜在不同条件下的力学性能进行了理论分析。研究了SiC薄膜的面积和厚度对刚度的影响,结果表明,其刚度与薄膜面积成反比,与薄膜厚度的三次方成正比。其次,研究了材料中缺陷的尺寸及其位置对SiC薄膜力学性能的影响,模拟结果表明,缺陷的位置越接近薄膜中心,对刚度的影响越大;缺陷的尺寸越大,密度越高,薄膜的刚度越小。根据实验测得高温下杨氏模量数据,模拟计算发现SiC薄膜的刚度在290-2 500K范围内,随温度升高呈准线性下降趋势。The mechanical properties of SiC thin films are still not clear under extreme environment,and the relevant mechanical parameters are still required to be further studied.Using software ANSYS,the mechanical properties of dimensional SiC thin films under different conditions were analyzed in theory.The impact of the area and thickness of SiC film on its rigidity was studied.The results show that the rigidity is inversely proportional to its size,but is direct proportional to three times of the film＇s thickness.The effects of the SiC film defects on the mechanical properties were also analyzed.The simulation results show that the locations of the defect have a great impact on the stiffness of the film,the closer the defects approaching to the center of the film,the effect of the rigidity is greater.The bigger defect size and density induce lower stiffness of the film.Furthermore,the stiffness of SiC film shows quasi-linear downward trend with the increasing temperature from 290to2 500 K.

关 键 词：SIC薄膜 ANSYS数值模拟 刚度 缺陷 温度 

分 类 号：TN304.2[电子电信—物理电子学]