有机胺碱对硅通孔铜膜化学机械抛光的影响  

Effect of Organic Amine Alkali on Chemical Mechanical Polishing of Through-Silicon-Via Copper Films

作　　者：刘俊杰[1,2] 刘玉岭[1,2] 牛新环[1,2] 王如[1,2] 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北工业大学天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2017年第1期37-42,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(E2013202247;F2015202267);河北省科技计划资助项目(15211027);河北省博士后择优资助项目(B2015003011);河北省高校研究资助项目(ZC2016027);天津市自然科学基金资助项目(16JCYBJC16100)

摘　　要：有机胺碱可与铜离子反应且产物在碱性条件下溶于水,这为硅通孔(TSV)铜膜的碱性化学机械抛光(CMP)提供了有利条件。研究了大分子有机胺碱对铜膜化学机械抛光的影响。首先测试了不同体积分数有机胺碱对碱性抛光液中磨料粒径和Zeta电位的影响,然后在直径3英寸(1英寸=2.54 cm)铜片上模拟了不同体积分数有机胺碱对铜去除速率的影响。实验结果表明:有机胺碱对抛光液中磨料粒径和Zeta电位没有影响;随着有机胺碱体积分数的增加,铜的去除速率先快速增加,达到一峰值后趋于稳定,最后略有下降;当有机胺碱的体积分数为5%时,TSV图形片铜膜去除速率达到最高值2.1μm/min,剩余铜膜总厚度差减小到1.321 76 nm,实现了纳米级的化学机械抛光。Organic amine alkali can react with copper ions and the reaction product can dissolve in water under alkaline conditions,which provides favorable conditions for alkaline chemical mechanical polishing（ CMP） of through-silicon-via（ TSV） copper films. The effect of macromolecular organic amine alkali on chemical mechanical polishing of copper films was studied. Firstly,the influences of the organic amine alkali with different volume fractions on the abrasive particle size and Zeta potential of alkaline polishing slurry were measured. Then the influence of organic amine alkali of different volume fractions on the removal rate of copper using the copper wafer of 3 inches（ 1 inch = 2. 54 cm） diameter was simulated. The experimental results show that the organic amine alkali has no effect on the abrasive particle size and Zeta potential of the polishing solution; with the increase of the volume fraction of organic amine alkali,the removal rate of copper increases rapidly first,and then tends to be stable after reaching a peak,finally decreases slightly. The removal rate of copper films on the TSV pattern wafer reaches the highest value 2. 1 μm / min by using the slurry containing 5% volume fraction of organic amine alkali,and the total thickness variation of the copper films after CMP is reduced to 1. 321 76 nm,realizing nano-scale chemical mechanical polishing.

关 键 词：硅通孔 有机胺碱 铜膜 化学机械抛光 一致性 

分 类 号：TN305.2[电子电信—物理电子学]