ALE法对InSb/GaAs异质薄膜电学性能的改进  

Electrical performance of InSb/GaAs films improved by ALE

作　　者：尚林涛[1] 刘铭[1] 周朋[1] 邢伟荣[1] 沈宝玉[1] SHANG Lin-tao LIU Ming ZHOU Peng XING Wei-rong SHEN Bao-yu(North China Research Institute of Electro-optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2017年第1期67-71,共5页Laser & Infrared

摘　　要：以GaAs(100)为衬底,采用原子层外延(ALE)的方法在GaAs缓冲层和常规InSb外延层间引入85个周期约30nm的InSb低温缓冲层,以快速降低InSb和GaAs界面间较大的晶格失配(14.6%)对外延层质量造成的不利影响,从而改进异质外延薄膜的电学性能。实验结果显示,ALE低温缓冲层能较快地释放晶格失配应力,降低位错密度。室温和77K的Hall测试显示,引入低温ALE缓冲层生长的InSb/GaAs异质外延薄膜,其InSb外延层本征载流子浓度和迁移率等电学性能较常规的方法有着较大的改进。Taking GaAs （100） as a substrate, an 85 periods InSb low temperature buffer layer with about 30nm thick is introduced between GaAs buffer layer and InSb epitaxial layer by ALE method, which rapidly reduces the influence of lattice mismatch between InSb and GaAs on epitaxial layer, thus, the electrical properties of heteroepitaxial films will be improved. The experimental results show InSb low temperature buffer layer can rapidly release the stress of lattice mismatch and reduce defect density. Hall tests at room temperature and 77K show the electrical properties of InSb epitaxial layer grown by ALE method are significantly improved compared with the conventional method.

关 键 词：分子束外延 原子层外延 本征 INSB GAAS 

分 类 号：TN213[电子电信—物理电子学]