一种具有多电极结构的高压SOI LDMOS器件  

A SOI LDMOS Device with Multi-Electrode Structure

作　　者：黄勇[1,2] 李阳[1] 周锌[1] 梁涛[1,2] 乔明[1] 张波[1] HUANG Yong LI Yang ZHOU Xin LIANG Tao QIAO Ming ZHANG Bo(School of Micro-Elec. and Sol Sta Elec. , Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China Changhong Electric Co., Ltd., Mianyang, Sichuan 621000, P. R. China)

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054 [2]四川长虹电器股份有限公司,四川绵阳621000

出　　处：《微电子学》2017年第2期247-249,267,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61376080)

摘　　要：针对传统高压功率器件的击穿电压与比导通电阻始终相互矛盾的问题,提出了一种具有多电极结构的高压SOI LDMOS器件。该结构在漂移区的上方引入多个电极,每个电极偏置在不同的电位,器件正常工作时的电子电流聚集于漂移区表面,提供了一个低阻的导电通道,从而降低了比导通电阻。在漂移区引入多个额外电场峰值,提高了器件的击穿电压。与传统结构相比,新结构能够将击穿电压从325V提高到403V,并且比导通电阻降低43%。For the conventional high voltage power devices,the breakdown voltage and the specific on-resistance always need trade-off.So a high voltage SOI LDMOS device with multi-electrode structure was proposed.The multielectrode structure was introduced into the drift region,and the electrodes were biased with different potentials.When the device was in normal operation,the electronic current could be gathered on the surface of drift region,and a conductive channel with low resistance was provided,which had reduced the specific on-resistance.A plurality of additional electric field peaks was introduced in the drift region,and the device＇s breakdown voltage was improved.Compared with the conventional structure,the new structure could increase the breakdown voltage from 325Vto403 V,and the specific on-resistance was reduced by 43%.

关 键 词：击穿电压 比导通电阻 多电极 

分 类 号：TN386[电子电信—物理电子学]