低位错密度4 inchGaSb(100)单晶生长及高质量衬底制备  

Growth of 4 inch Diameter GaSb(100) Single Crystal with Low Dislocation Density and High Quality Substrate Preparation

作　　者：杨俊[1] 段满龙[1] 卢伟[1] 刘刚[1] 高永亮[1] 董志远[1] 王俊[1] 杨凤云[1] 王凤华[1] 刘京明[1] 谢辉[1] 王应利[1] 卢超[1] 赵有文[1,2] 

机构地区：[1]中国科学院半导体研究所,中国科学院半导体材料科学重点实验室,低维半导体材料与器件北京市重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《人工晶体学报》2017年第5期820-824,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61474104,61504131)

摘　　要：采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备。通过优化热场,可重复生长出非掺和掺Te整锭(100)单晶,单晶锭的重量为5~8 kg,成晶率可达80%以上。4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm^(-2) ,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好。晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性。经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片。通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底。Undoped and Te-doped 4 inch diameter （100） GaSb single crystals in 5-8 kg weight have been grown by using liquid encapsulated Czochralski （LEC） and substrate wafer have been prepared. By optimizing the thermal field, single crystal yield as high as 80% have been achieved. Dislocation etch pit density （EPD） of the wafer is less than 500 cm-2 and its X-ray diffraction rocking curves has a full width at half maximum （FWHM） around 29 arcse, indicating a high lattice perfection. The wafer has good electrical uniformity, benefiting from the flat solid-liquid interface during the single crystal growth process. Epi-ready 4 inch GaSh substrate wafer with good flatness and low surface roughness has been prepared. N type GaSb wafer with good near infrared transmittance has been prepared by controlling the native acceptor concentration and doping concentration.

关 键 词：锑化镓(Ga Sb) 液封直拉法(LEC) 单晶 衬底 

分 类 号：TN304[电子电信—物理电子学]