先进集成电路技术发展现状分析  

Development Status of Advanced Integrated Circuit Technology

作　　者：张卫[1] 

机构地区：[1]复旦大学微电子学院,上海201203

出　　处：《集成电路应用》2017年第9期22-27,共6页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2016.160505)

摘　　要：集成电路技术到22/20 nm节点,世界技术先进厂商和技术研究机构出现了分歧,如Intel率先采用Fin FET技术,而TSMC继续沿用平面体硅技术。未来,在摩尔定律的主旋律下,国际主要集成电路企业技术发展路线在各个节点不尽相同,各显神通。在半导体存储器产品领域,先进集成电路技术面临的重大问题及挑战。针对我国当前电子信息技术良好的发展形势,进一步分析集成电路先进节点技术和存储器技术。With integrated circuit technology developing to 22/20 nm nodes, there is a divergence between the world＇s technologically advanced manufacturers and technology research institutes. Intel pioneered FinFET technology, but TSMC continued to use flat silicon technology. In the future, following the main theme of Moore＇s law, the main international integrated circuit enterprise technology development path is not the same in each node. In the field of semiconductor memory products, the important problems and challenges faced by advanced integrated circuit technology. In view of the good development situation of electronic information technology in our country, the advanced node technology and memory technology of IC are analyzed.

关 键 词：集成电路技术 22/20 NM FINFET 平面体硅 存储器技术 3D NAND 

分 类 号：TN40[电子电信—微电子学与固体电子学]