P型阶梯掺杂4H-SiC多层薄膜同质外延生长研究  

Homoepitaxial Growth of 4H-SiC Multilayer Films With Stepped Doping of P-type

作　　者：刘兴昉[1] 闫果果[1] 桑玲 郑柳 钮应喜 王嘉铭 张峰[1] 杨霏 杨香[1] 樊中朝[1] 孙国胜[1] 曾一平[1] 温家良 何志[1] LIU Xingfang YAN Guoguo SANG Ling ZHENG Liu NIU Yingxi WANG Jiaming ZHANG Feng YANG Fei YANG Xiang FAN Zhongchao SUN Guosheng ZENG Yiping WEN Jialiang HE Zhi(Institute of Semiconductors, Chinese Academy of Sciences, Haidian District, Beijing 100083, China Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China)

机构地区：[1]中国科学院半导体研究所,北京市海淀区100083 [2]全球能源互联网研究院,北京市昌平区102209

出　　处：《智能电网》2017年第8期752-756,共5页Smart Grid

基　　金：国家重点研发计划(2016YFB0400500);北京市科技计划(D16110300430000);国家自然科学基金(61574140);全球能源互联网研究院项目(SGRI-GL-81-16-001)~~

摘　　要：基于碳化硅半导体的高压电力电子器件如MOSFET、IGBT等有望用于智能电网系统中。这些器件的基本结构包含PN结及其变体,其特点是包括N-漂移层、P阱区及位于其中的N+和P+并列阱区,形成了P+(N+)/P/N-结构。一般采用高温高能离子注入的方式制备此结构,具有较高的难度。本文采用外延生长的方法实现P+/P/N-同质多层结构,以P型阶梯掺杂的方式实现了一种4H-SiC多层薄膜同质外延材料。与注入方法相比,本方法在阱区几何尺寸、掺杂精度上具有优势,可望用于今后制备性能更优的同类高压器件。High-voltage power electronics based on silicon carbide semiconductors such as MOSFET and IGBT are expected to be used in smart grid systems.The basic structure of these devices includes the pn junction and its variants,in which N-drift layer,P-well region are included,together with N＋ and P＋ parallel wells,forming P＋（N＋）/P/N- homogeneous multilayer structure.Generally,high temperature and high energy ion implantation is used to prepare this structure,which has been somehow with difficulty.In this paper,P＋/P/N- homogeneous multilayer structure is realized by epitaxial growth method,and a 4H-SiC multilayered homoepitaxial film is realized by p-type stepped doping.Compared with the implantation method,this method has advantages in the geometric size and doping precision of the well regions,and it is expected to be used in similar high voltage devices with better performance in the future.

关 键 词：碳化硅 高压器件 外延 阱区 智能电网 

分 类 号：TN304.054[电子电信—物理电子学]