功率半导体器件辐射效应综述  

Review of Radiation Effects in Power Semiconductor Devices

作　　者：谭桢 魏志超[2] 孙亚宾 万欣 晋虎 万慧君 王敬[1] 刘道广[1] 许军[1] TAN Zhen WEI Zhichao SUN Yabin WAN Xin JIN Hu WAN Huijun WANG Jing LIU Daoguang XU Jun(Inst. of Microelec. ＆ Tsinghua Univ. , Beijing 100084, P. R. China China Academy of Space Technol. , Beijing 1000Z9, P. R. China School of Inform. Sci. Technol. , East China Normal Univ., Shanghai 200241, P. R. China Beijing Aurorachip Company Limited, Beijing 100084, P. R. China Tangshan Grid Company, Tangshan, Hebei 063000, P. R. China)

机构地区：[1]清华大学微电子学研究所,北京100084 [2]中国空间技术研究院,北京100029 [3]华东师范大学信息科学技术学院,上海200241 [4]北京极光源芯科技有限公司,北京100084 [5]唐山供电公司,河北唐山063000

出　　处：《微电子学》2017年第5期690-694,共5页Microelectronics

基　　金：国家重点研发计划资助项目(2017YFB 0404100);清华大学自主科研项目(20141081190)

摘　　要：功率半导体器件是航天器电源系统中的核心元件,太空环境中的粒子辐射会使其发生失效。首先,总结了硅功率半导体器件几种主要的辐射效应。然后,介绍了近年来一些新的研究成果和研究热点。最后,对第三代半导体功率器件中的辐射效应进行了简单介绍。Power semiconductor devices are key components in power system of spacecraft,which can be damaged by particles in space.The major radiation effects in silicon power semiconductors were discussed first.Then some new topic and research results in recent years were introduced.At last,the radiation effects in new type power devices and the radiation hardened techniques were summarized briefly.

关 键 词：硅功率器件 宽禁带半导体器件 总剂量效应 单粒子效应 

分 类 号：TN303[电子电信—物理电子学]