晶圆各向异性对4H-SiC基VDMOSFET单粒子效应的影响  

Influence of Wafer Anisotropy on Single Event Effect in 4H-SiC VDMOSFET

作　　者：刘忠永[1] 蔡理[1] 刘保军[2] 刘小强[1] 崔焕卿[1] 杨晓阔[1] 

机构地区：[1]空军工程大学理学院,西安710051 [2]空军第一航空学院,河南信阳464000

出　　处：《固体电子学研究与进展》2017年第4期234-238,256,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(11405270)

摘　　要：研究了晶圆各向异性对4H-SiC基垂直双扩散MOSFET(VDMOSFET)单粒子效应的影响。建立了器件二维仿真结构,选取合适的仿真模型并对参数进行了修正。仿真结果表明,基于(0001)和(11 2-0)晶圆器件的单粒子烧毁(SEB)阈值电压(V_(SEB))分别为350V和255V,SEB发生时的临界击穿电场强度分别为2.4×10~6 V/cm和1.8×10~6 V/cm。在V_d=30V、V_g=-13.9 V的偏置条件下,两种晶圆器件的氧化层最大瞬态电场均为5.6×10~6 V/cm。结果表明晶圆各向异性导致(0001)晶圆器件的抗SEB能力更强,而对单粒子栅穿效应(SEGR)没有影响。The effect of wafer anisotropy on the single event effect （SEE） in 4H-SiC power vertical double-diffused MOSFET （VDMOSFET） was studied. A two-dimensional simulation structure of the device was built, the physical model and the model parameters were chosen and modified. The simulation results show that the single event burnout （SEB） threshold voltages （VsEB） of the devices based on （0001） and （11 20） wafers are 350 V and 255 V, respectively. And the critical breakdown electric field intensity at the occurrence of SEB are 2.4 × 106 V/cm and 1.8× 106 V/cm, respectively. Under the bias condition of Va =30 V and Vg =-13.9 V , the maximum transient electric field of the oxide layer of the devices on the two kinds of wafers is 5. 6 × 106 V/cm. The results indicate that the wafer anisotropy leads to better anti-SEB for devices on the （0001） wafer , but has no effect on the single event gate rupture （SEGR）.

关 键 词：4H-SIC 晶圆各向异性 单粒子烧毁 单粒子栅穿 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN406