碳化硅功率模块封装技术进展  

Study of Silicon Carbide Power Module in Packaging Technology

作　　者：曹峻 张兆强[2] CAO Jun;ZHANG Zhaoqiang(Inventchip Technology Co.,Ltd,Shanghai 201306,China;Department of material science,Fudan University,Shanghai 200433,China)

机构地区：[1]上海瞻芯电子科技有限公司,上海201306 [2]复旦大学材料科学系,上海200433

出　　处：《集成电路应用》2018年第8期20-24,共5页Application of IC

基　　金：上海科技创新项目临港智能制造产业专项基金(2017.ZN2017020315);国家科技重大专项课题(2017ZX02315005-002)极大规模集成电路制造装备及成套工艺-三维集成封装CPI研究

摘　　要：近年来,随着新能源产业的快速发展,电力电子系统对功率半导体器件性能提出了更高的要求,作为宽禁带半导体材料的碳化硅功率器件以其相对于传统硅基器件的优异性能,正引起大家的广泛关注。与此同时,碳化硅器件的封装技术正成为限制器件性能发挥的瓶颈。从封装结构和材料角度,探讨了碳化硅功率模块封装技术的最新进展。With the rapid growth of new-energy industry, power electronics system has become more demanding on the performance of power semiconductor devices in recent years. As the Wide Band Gap （WBG） material, Silicon-Carbide （SiC） power devices show the excellent performance over traditional Silicon（Si）power devices and is attracting wider attention. Nevertheless, the packaging technology has become a performance bottleneck in applications of SiC power devices. This paper provides an introduction of SiC power module development with an emphasis on the packaging module structure and materials.

关 键 词：宽禁带半导体 碳化硅 模块 封装技术 

分 类 号：TN303[电子电信—物理电子学] TN405