一种提高功率MOSFET击穿电压的终端结构  

A Terminal Structure for Improving the Breakdown Voltage of Power MOSFET

作　　者：林洪春 薛斌 LIN Hongchun;XUE Bin(The 47th Research Institute of China Electronics Technology Group Corporation,Shenyang 110032,China)

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2018年第3期20-23,共4页Microprocessors

摘　　要：MOSFET器件具有驱动电路简单、开关速度快、无二次击穿等固有优点,广泛应用于军工产品、消费类电子、工业产品、机电设备、智能手机及其他便携式数码电子产品等领域。近年来随着军工设备更新换代、民品产业绿色节能等需要,MOSFET器件的优势愈发明显,市场占有量显著增加。分析了MOSFET的结构特征和电学特性,重点研究了提高MOSFET击穿电压的方法,在同样衬底电阻率的情况下实现了功率MOSFET高压的电参数,解决了MOSFET在保证低导通电阻的情况下如何实现高电压的问题。该结构成功应用于MOSFET产品的设计、流片之中,显著提高了产品的电压参数和整体性能。MOSFET devices are widely used in military products, consumer electronics, industrial products, mechanical and electrical equipment, smart phones and other portable digital electronic products due to their simple driving circuit, fast switching speed and no secondary breakdown. In recent years, with the upgrading of military equipment and the need for green energy conservation in the civilian product industry, the advantages of MOSFET devices have become more and more obvious, and the market share has increased significantly. This paper analyzes the structure and electrical characteristics of MOSFET, focusing on the method of improving the breakdown voltage of MOSFET, realizing the high voltage electrical parameters of power MOSFET under the same substrate resistivity, and solving the problem of how to realize the high voltage of MOSFET under the condition of ensuring the low on resistance. The structure has been successfully applied to the design and chip production flow of MOSFET products, which significantly improves the voltage parameters and overall performance of the products.

关 键 词：MOSFET器件 VDMOS器件 终端结构 击穿电压 

分 类 号：TN47[电子电信—微电子学与固体电子学]