不同退火温度下Mo/4H-SiC肖特基接触势垒不均匀及XRD分析  

Analysis of the Inhomogeneous Barrier and XRD of Mo/4H-SiC Schottky Contacts Formed at Different Annealing Temperatures

作　　者：董升旭 白云[1] 杨成樾[1] 汤益丹[1,2] 陈宏 田晓丽[1] 刘新宇 Dong Shengxu;Bai Yun;Yang Chengyue;Tang Yidan;Chen Hong;Tian Xiaoli;Liu Xinyu(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049

出　　处：《微纳电子技术》2018年第9期625-629,670,共6页Micronanoelectronic Technology

基　　金：国家重点研发计划资助项目(2016YFB0100601)

摘　　要：为探究退火温度对Mo/4H-SiC肖特基接触势垒不均匀程度的影响,对在不同退火温度下形成的Mo/4H-SiC肖特基接触进行了不同测试温度下的电流-电压（I-V）及电容-电压（CV）测试,运用Tung理论模型和＂T0反常＂中的T0值评价势垒不均匀程度,X射线衍射（XRD）分析肖特基接触的物相组成。分析结果表明,测试温度升高时I-V测试提取的势垒高度接近于C-V测试提取的势垒高度,退火温度500℃及以上时Mo与4H-SiC发生反应,且导致较低的势垒高度。退火温度为600℃时,肖特基接触具有最低的势垒不均匀程度,且此退火温度下势垒高度相对500℃及700℃时较高,物相组成为Mo2C及Mo4.8Si3C0.6。In order to investigate the effect of annealing temperature on the degree of barrier inhomogeneity of Mo/4H-SiC Schottky contacts,the current-voltage（I-V）and capacitance-voltage（C-V）characteristics of the Mo/4H-SiC Schottky contacts formed at different annealing temperatures were measured at different testing temperatures.The degree of barrier inhomogeneity was evaluated with Tung theoretical model and T_0 value of ＂T_0 anomaly＂,and the phase components of the Schottky contacts were analyzed by X-ray diffraction（XRD）.The analysis result shows that the barrier height obtained from the I-Vtest at high testing temperatures is close to the barrier height obtained from the C-Vtest,and Mo reacts with 4H-SiC at the annealing temperature of 500 ℃ and above,leading to the low barrier height.The Schottky contact has the lowest degree of barrier inhomogeneity at the annealing temperature of 600 ℃,and the barrier height at the annealing temperature of 600 ℃is relatively higer than those at the annealing temperature of 500 ℃ and 700 ℃.The phase components are Mo2C and Mo4.8Si3C0.6.

关 键 词：4H-SIC 肖特基接触 X射线衍射(XRD) 势垒不均匀 退火温度 

分 类 号：O471[理学—半导体物理]