磁控溅射法制备InN薄膜的可控生长及表征  

Controlled Growth and Characterization of InN Thin Films Perpared by Magnetron Sputtering

作　　者：王箫扬 张雄 杨延宁[1] 贺琳 张富春[1] 张水利[1] 李小敏[1] WANG Xiao-yang;ZHANG Xiong;YANG Yan-ning;HE Lin;ZHANG Fu-chun;ZHANG Shui-li;LI Xiao-min(College of Physics and Electronic Information,Yan＇ an University,Yan＇an 716000,China)

机构地区：[1]延安大学物理与电子信息学院,延安716000

出　　处：《人工晶体学报》2018年第6期1123-1127,共5页Journal of Synthetic Crystals

基　　金：延安大学2017年科研计划项目(YDQ2017-11);国家自然科学基金(61664008);延安大学引导项目(YD2016-02);为建设高水平大学学科建设的专项研究基金(2015SXTS02)

摘　　要：为了开发氮化铟(InN)半导体材料在光电子领域的应用,采用磁控溅射法在Si(111)衬底上实现了InN薄膜的制备。通过X射线衍射仪(XRD)和扫描电镜(SEM)对获得的InN薄膜样品进行表征,系统地研究了压强、Ar和N2流量比及衬底温度对InN薄膜结构、形貌的影响。结果表明:随着压强的增加,(101)峰的强度先增加后减小,晶面距离d先变小后变大且均获得三角锥形的InN薄膜;随着Ar与N2流量比的增加,InN薄膜的生长取向由沿(101)面变为沿(002)面生长且均获得三角锥状的InN晶粒;随着衬底温度的升高,InN薄膜的生长取向发生了变化且形貌逐渐由三角锥状向截面为六方的颗粒状结构转化。In order to licationsdevelop InN semiconductor materials＇ optoelectronics in the optoelectronics field. Si films（111） were prepared by magnetron sputtering, and InN thin film samples were characterized by X-Ray Diffraction（XRD） and scanning electron microscopy（SEM）. The influences of pressure,Ar and N2 flow rate and substrate temperature on morphology,structure of InN film are investigated systematically. The results show that the intensity of（101） peak get increased and turn decreased with the increasing of pressure,and the crystal surface distance becomes smaller and then gets larger,eventually,InN film of triangular cone are obtained. The growth orientation of InN film grows from（101） surface to（002） surface with the increase of the flow ratio of Ar to N2,finally,which gets InN grains of trigonal cone. The growth orientation of InN films changed,and the morphology of the films changed from trigonal taper to six-dimensional grain structure with the increase of substrate temperature,

关 键 词：INN薄膜 磁控溅射 压强 流量比 衬底温度 

分 类 号：TN304.2[电子电信—物理电子学]