检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:曹靓[1] 田海燕[1] 王栋[1] CAO Liang;TIAN Haiyan;WANG Dong(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,China)
机构地区:[1]中国电子科技集团第五十八研究所,江苏无锡214072
出 处:《电子与封装》2018年第9期36-38,41,共4页Electronics & Packaging
摘 要:数字集成电路在宇宙空间中会受到单粒子效应的影响,随着半导体工艺的进步,器件尺寸不断缩小,单粒子效应也越发显著。单粒子瞬态脉冲对电路的影响随着电路工作主频越来越高也变得越发严重,甚至可能使电路功能完全失效。在自刷新三模冗余触发器设计的基础上,进行了抗单粒子瞬态辐射效应加固设计,增强了原设计的自刷新三模冗余触发器的抗单粒子瞬态脉冲的能力,为以后研制抗辐射数字电路奠定了基础,提供了良好的借鉴。With the development of semiconductor technology and the shrinking of the process size, the single-event effects on digital integrated circuits used in space become more and more obvious. Especially when the working frequency is high, single-event transient on the circuit is very serious, and may even cause failure of the circuit function. This paper introduces an improve design of TMR(Triple Modular Redundancy) flip-flop with self-refresh. The ability to withstand single-event transient of the original flip-flop design is improved. This work supplies a good technologic base for design of radiation hardened digital logic in the future.
分 类 号:TN393[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.94