GaN电力电子和射频器件产业链分析  

Analysis of GaN Power Electronics and RF Devices in China Industrial Chain

作　　者：沈一度 SHEN Yidu(The third generation semiconductor joint innovation incubator center,Beijing 100083,China.)

机构地区：[1]第三代半导体联合创新孵化中心,北京100083

出　　处：《集成电路应用》2018年第10期91-92,共2页Application of IC

基　　金：国家第三代半导体联合创新孵化中心科技创新课题项目

摘　　要：Ⅲ族氮化物半导体具有宽的直接带隙,优异的物理、化学稳定性,高饱和电子漂移速度,高击穿场强等优越性能,是发展高频、高温、高功率电子器件的最优选材料。在Ⅲ族氮化物材料体系中,AlGaN/GaN异质结构是迄今为止研制高温、高频、大功率电子器件最重要和最基本的材料体系。GaN产业链包括上游的衬底和外延环节、中游的器件和模块制造环节以及下游的应用环节。Semiconductors of III nitride have a wide direct band gap, excellent physical and chemical stability, high saturated electron drift rate, high breakdown field strength and other advantages. It is the most preferred material for developing high frequency, high temperature and high power electronic devices. AlGaN/GaN hetero structures are the most important and basic materials for the development of high temperature, high frequency and high power electronic devices. The GaN industry chain includes the upstream substrate and epitaxial links, the upstream device and module manufacturing links, and the downstream application links.

关 键 词：氮化物半导体 GAN 大功率电子器件 射频器件 

分 类 号：TN609[电子电信—电路与系统]