Ni离子注入和热退火对GaN形貌和磁性的影响  

Effects of the Ni Ion Implantation and Thermal Annealing on Morphology and Magnetic Characteristics of GaN

作　　者：梁李敏[1] 解新建[1] 刘辉[1] 田园[1] 郝秋艳[1] 刘彩池[1] Liang Limin;Xie Xinjian;Liu Hui;Tian Yuan;Hao Qiuyan;Liu Caichi(School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China)

机构地区：[1]河北工业大学材料科学与工程学院

出　　处：《微纳电子技术》2018年第10期757-761,共5页Micronanoelectronic Technology

基　　金：河北省教育厅资助项目(GCC2014023)

摘　　要：利用离子注入法将Ni离子注入到金属有机化学气相沉积（MOCVD）法制备的p-GaN薄膜中，制备出了GaN基稀磁半导体材料。采用X射线衍射仪（XRD）、扫描显微镜（SEM）和振动样品磁强计（VSM）研究了离子注入剂量和热退火对GaN样品的结构、形貌和磁性能的影响。研究结果表明：Ni离子注入未在GaN晶格中引入第二相，中等剂量的Ni离子辐照GaN样品在室温下具有顺磁性，800℃热退火后样品的磁性由顺磁性转化为铁磁性，具有较高的饱和磁化强度。热退火后p-GaN的晶格损伤恢复和空穴载流子浓度增加，因此800℃热退火样品的铁磁性转变是由于Ni离子的自旋电子与空穴栽流子的相互作用增强引起的。The GaN based diluted magnetic semiconductor material was prepared with Ni ion im- plantation into the p-GaN thin film grown by using the metal organic chemical vapor deposition （MOCVD） method. The effects of the ion implantation dose and thermal annealing on the struc- tural, morphological and magnetic characteristics of the GaN samples were studied by X-ray dif- fraetometer （XRD）, scanning electron microscope （SEM） and vibrating sample magnetometer （VSM）. The research results show that no second phase is introduced into the GaN lattice by Ni ion implantation, the GaN sample irradiated by Ni ion with the moderate dose is paramagnetic at room temperature, and the sample transforms from paramagnetism into ferromagnetism after thermal annealing at 800 °C and is of high saturation magnetization. Thermal annealing was able to recover the lattice damage and increase the hole carrier concentration, therefore, the transfor- mation of the ferromagnetism for the sample after thermal annealing at 800 °C was attributed to the enhanced interaction between spinning electrons and hole carriers of the Ni ion.

关 键 词：氮化镓 稀磁半导体 离子注入 铁磁性 热退火 

分 类 号：O484.43[理学—固体物理]