高电流密度Ga2O3 MOSFET器件的研制  

Development and Fabrication of Ga2O3 MOSFET Device with High Current Density

作　　者：田秀伟[1] 马春雷[1] 刘沛[2] 韩婷婷[3] 宋旭波[1] 吕元杰[3] Tian Xiuwei;Ma Chunlei;Liu Pei;Han Tingting;Song Xubo;Lii Yuanjie(The 13th Research Institute,CETC,Shifiazhuang 050051,China;China Academy of Aerospace Standardization and Product Assurance,Beijing 100071,China;Science and Technology on ASIC Laboratory,Shifiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国航天标准化与产品保证研究院,北京100071 [3]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2018年第10期740-744,786,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61674130,61306113)

摘　　要：研制了一款具有高漏源饱和电流密度的Ga2O3MOSFET器件。采用金属有机化学气相沉积（MOCVD）方法在Fe掺杂半绝缘（010） Ga2O3同质衬底上外延得到n型β-Ga2O3薄膜材料,n型Ga2O3沟道层Si掺杂浓度为2. 0×10^（18）cm^（-3）,n型沟道厚度为80 nm。采用Si离子注入工艺,器件欧姆特性得到大幅改善,欧姆接触电阻降至1. 0Ω·mm。采用原子层沉积（ALD）厚度为25 nm的Hf O2作为器件的栅下绝缘介质层。测试结果表明,在栅偏压为0 V时,器件的开态导通电阻仅为65Ω·mm,漏源饱和电流密度达到173 m A/mm,器件的三端关态击穿电压达到120 V。The Ga2O3 MOSFETs with high drain-source saturation current density were developed and fabricated. n-typed β-Ga2O3 film material was homoepitaxially grown on a Fe-doped semi-insulating（ 010） Ga2O3 substrate by metal organic chemical vapor deposition（ MOCVD）. The Si doping concentration of n-typed Ga2O3 channel layer is 2. 0 × 10^（18） cm^（-3）,and the thickness of channel layer is 80 nm.Si-ion implantation technology was adopted to improve the ohmic characteristics,and the ohmic contact resistance reduced to 1. 0 Ω·mm. The HfO2 films with the thickness of 25 nm grown by atomic layer deposition（ ALD） was used as gate dielectric of the device. The tested results show that when the gate bias voltage is 0 V,the on-resistance is only 65 Ω·mm,and the drain-source saturation current density is 173 m A/mm. The three-terminal off-state breakdown voltage of the fabricated device reaches 120 V.

关 键 词：氧化镓(Ga2O3) 金属氧化物半导体场效应晶体管(MOSFET) 漏源饱和电流密度 离子注入 击穿电压 

分 类 号：TN386[电子电信—物理电子学] TN304.2