SiC JFET与SiC MOSFET失效模型及其短路特性对比  

Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET

作　　者：周郁明[1] 刘航志 杨婷婷 陈兆权 ZHOU Yu-ming;LIU Hang-zhi;YANG Ting-ting;CHEN Zhao-quan(Anhui Provincial Key Laboratory for Power Electronics&Motion Control,Anhui University of Technology,Maanshan,Anhui 243002,China)

机构地区：[1]安徽工业大学电力电子与运动控制安徽省重点实验室,安徽马鞍山243002

出　　处：《电子学报》2019年第3期726-733,共8页Acta Electronica Sinica

基　　金：国家自然科学基金(No.11575003);安徽高校自然科学研究重点项目(No.KJ2016A805)

摘　　要：建立了两种碳化硅(SiC)器件JFET和MOSFET的失效模型.失效模型是在传统的电路模型的基础上引入了额外附加的泄漏电流,其中,SiC JFET是在漏源极引入了泄漏电流,SiC MOSFET是在漏源极和栅极引入了泄漏电流;同时,为了体现温度和电场强度与失效的关系,用与温度和电场强度相关的沟道载流子迁移率代替了传统电路模型所采用的常数迁移率.有关文献的实验结果和半导体器件的计算机模拟(Technology Computer Aided Design,TCAD)验证了两种SiC器件失效模型的准确性.所建立的失效模型能够对比SiC JFET和SiC MOSFET的短路特性.The failure models of SiC JFET and SiC MOSFET have been developed.Based on the conventional circuit models of SiC JFET and SiC MOSFET,the additional leakage currents between the electrodes are introduced.For SiC JFET,the leakage current between the drain and the source is considered.For SiC MOSFET,two leakage currents are considered,one is the current between the drain and the source,another is the additional leakage current of the gate.Furthermore,the mobility dependent on the temperature and the electric-field strength replaces the constant mobility in conventional circuit models.The results from other experimental works and TCAD simulations verify the failure models of SiC JFET and SiC MOSFET.The developed failure models can be used to compare the short-circuit performances of SiC JFET and SiC MOSFET.

关 键 词：SIC JFET SIC MOSFET 失效 迁移率 泄漏电流 短路 

分 类 号：TN386[电子电信—物理电子学]