ULSI铜互连线CMP抛光液的研制  

CMP Slurry of Copper Interconnection for ULSI

作　　者：王新[1] 刘玉岭[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《Journal of Semiconductors》2002年第9期1006-1008,共3页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :60 1760 3 3 );河北省自然科学基金 (项目编号 :5 0 2 0 2 9)资助项目~~

摘　　要：介绍了一种碱性抛光液 ,选用有机碱做介质 ,Si O2 水溶胶做磨料 ,依据强络合的反应机理 ,克服了 Si O2 水溶胶做磨料对铜去除速率低及在溶液中凝胶的难点 .实验结果表明 :该抛光液适用于 Cu化学机械抛光过程第一阶段的抛光 ,并达到了高抛光速率及铜 /钽 /介质层间的高选择性的效果 .In order to avoid many scratches on copper surface caused by hard mechanical alumina abrasives in Cu CMP process,a new Cu CMP slurry is introduced in which organic amine is used for complex agent and colloidal silica(SiO 2) is used for abrasive particles.According to mechanism of strong complex,the issuses that copper layer is removed slowly by colloidal silica and silicon glue generates in solution are solved.The experimental result shows that the slurry is suitable for the first polishing of Cu CMP process with faster removal rate of Cu and high selectivity between Cu/Ta/SiO 2.

关 键 词：ULSI 铜互连线 化学机械抛光 抛光液 SiO2水溶胶 

分 类 号：TN405[电子电信—微电子学与固体电子学]