用于铜的化学机械抛光液的研究  

Study on Cu CMP Slurry

作　　者：王新[1] 刘玉岭[1] 檀柏梅[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《固体电子学研究与进展》2002年第3期318-320,共3页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (批准号 60 1760 3 3 );天津市自然科学基金资助项目 (项目编号 0 13 60 5 911)

摘　　要：文中介绍了一种以碱性抛光液对铜进行全局平面化的方法 ,讨论了以 Si O2 水溶胶为磨料的抛光液在Cu-CMP过程中的化学 (络合 )作用及反应机理 ,并给出了抛光液的配比及上机实验结果。结果表明 :该抛光液用于对带有阻挡层和介质层的铜抛光 ,达到了对铜层的高去除速率和高选择比 。The technique of chemical mechanical planarization by new slurry was introduced. We discussed the chemical reaction and the complex mechanism caused by the slurry which used colloidal silica (SiO 2) for abrasive particles and organic alkali for medium (complex agent) in Cu CMP process. The composition of the slurry and the experimental results were presented in this paper. It was shown that using the slurry to polish copper layer with barrier and dielectric layer, faster removal rate of copper and higher selectivity between Cu/Ta/SiO 2 have been gained. So the expected results of Cu CMP process was given.

关 键 词：铜 化学机械抛光 碱性抛光液 全局平面化 CMP 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学]