Sl-GaAs单晶的热稳定性研究  

The Thermal Stability of Undoped LEC SI-GaAs Single Crystals

作　　者：曹福年[1] 杨锡权[1] 刘巽琅[1] 吴让元[1] 惠峰[1] 何宏家[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》1991年第3期241-244,共4页Research & Progress of SSE

基　　金：国家自然科学基金重大项目

摘　　要：SI-GaAs衬底材科的热稳定性对于用直接离子注入工艺制作GaAs场效应器件及集成电路是至关重要的.本文采用变温霍耳效应测量、光注入瞬态电流谱(OTCS)和原子吸收光谱等方法研究了热稳定性差的不掺杂LEC SI-GaAs单晶.结果表明,原子吸收光谱分析发现此晶体存在6.7×10^(15)cm^(-3)Fe杂质,其他两种方法观察到一个～0.62eV深能级.文中推测这是与杂质Fe有关的深受主,认为它对不掺杂LBC SI-GaAs单晶的热稳定性可能有重大影响.The thermal stability in SI-GaAs substrates is a critical issue in the fabrication of GaAs field effect transistors and integrated circuits by direct Ion implantation. In this paper, a thermally unstable undoped LEC SI-GaAs crystal has been investigated using tempsrature-dependent Hall measurement, OTCS and atomic absorption spectroscopy etct In the above sample, the impurity Fe of 6.7×1015cm-3 is found by atomic absorption spectroscopy. A deep level at -0.62eV is observed by using other analysis techniques and is tentatively assigned to the deep acceptors related to the impurity Fe, which may have significant effect on the thermal stability of undoped LEC SI-GaAs Crystals.

关 键 词：SI-GAAS 热稳定性 离子注入 

分 类 号：TN304.26[电子电信—物理电子学]