SI-GaAs单晶热稳定性及其电学补偿机理研究  

Study on Thermal Stability and Electrical Compensation Mechanism of Sl-GaAs

作　　者：王占国[1] 戴元筠 徐寿定[1] 杨锡权[1] 万寿科[1] 孙虹[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《固体电子学研究与进展》1991年第3期216-224,共9页Research & Progress of SSE

基　　金：国家自然科学基金重大项目

摘　　要：本文利用多种实验手段,包括OTCS,DLTS,低温PL等,对影响LEC SI-GaAs单晶电学性质热不稳定的可能因素进行了系统研究.在仔细分析对比文献发表的实验结果的基础上,提出了普遍成立的多能级电学补偿模型.这个模型不但能成功地对SI-GaAs单晶热不稳定的本质进行合理解释,而且还为研制高热稳定的GaAs材料提供了科学依据.The effects of all possible factors on thermal unstability of LEC SI-GaAs materials subject to heat-treatment have been systematically studied by using various techniques such as OTCS, DLTS and low temperature PL etc. On the basis of carefully analysing our and published experimental results, a new compensation model is presented in which five-level has been taken into account. This model can be used not only to successfully explain all phenomena related to conductivity of GaAs crystals, but also to provide a clue of improving the quality of this material.

关 键 词：SI-GaAs晶体 热稳定性 电学补偿 

分 类 号：TN304.26[电子电信—物理电子学]