MCM-D多层金属布线互连退化模式和机理  

The Degradation Mode and Mechanics of a Multilayer Interconnect Structure in MCM-D

作　　者：何小琦[1] 徐爱斌[1] 章晓文[1] 

机构地区：[1]信息产业部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2002年第5期6-10,共5页Electronic Product Reliability and Environmental Testing

摘　　要：介绍了MCM-D多层金属互连结构的工艺及材料特点,并就Cu薄膜布线导体的结构特点和元素扩散特性,说明了多层布线互连退化的模式和机理,以及防止互连退化的技术措施。实验分析表明,Au/Ni/Cu薄膜布线结构的互连退化原因是,Cu元素沿导带缺陷向表层扩散后,被氧化腐蚀,导致互连电阻增大,而Cu元素在温度应力作用下向PI扩散,导致PI绝缘电阻下降。The change of the interface state and the degradation mode has been investigated based on characteristic of MCM - D configuration and material and technology, which is caused in the Cu/PI thin multi -layer by the exterior stresses, The serial resistance and the isolation degration in the Cu/PI has been analyzed on the special designed samples. The reasons of the degradation was explained from the point of the view of the physical change which the thin metal is processed under the stresse.

关 键 词：MCM-D 多层金属布线 多芯片组件 通孔 退化 

分 类 号：TN305.94[电子电信—物理电子学]