温度对TFT SRAM单粒子翻转及其空间错误率预估的影响  

Effect of Temperature on Single Event Upset of TFT SRAM and Its Space Error Rate Prediction

作　　者：蔡莉[1] 刘建成[1] 覃英参 李丽丽[1] 郭刚[1] 史淑廷[1] 吴振宇[2] 池雅庆[2] 惠宁[1] 范辉[1] 沈东军[1] 何安林[1] CAI Li;LIU Jiancheng;QIN Yingcan;LI Lili;GUO Gang;SHI Shuting;WU Zhenyu;CHI Yaqing;HUI Ning;FAN Hui;SHEN Dongjun;HE Anlin(Innovation Center of Radiation Resistance Application Technology,China Institute of Atomic Energy,Beijing 102413,China;National University of Defense Technology,Changsha 410073,China)

机构地区：[1]中国原子能科学研究院抗辐照应用技术创新中心,北京102413 [2]国防科技大学,湖南长沙410073

出　　处：《原子能科学技术》2018年第4期750-755,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金面上基金资助项目(11475272)

摘　　要：本文研究了215~353K温度范围内商用4M0.15μm薄膜晶体管结构SRAM单粒子翻转(SEU)截面随温度的变化。实验结果显示,在截面曲线饱和区,SEU截面基本不随温度变化;在截面曲线上升区,SEU截面随温度的升高而增加。使用Space Radiation 7.0软件研究了温度对其空间错误率预估的影响,模拟结果显示,SEU截面随温度的变化改变了SRAM SEU截面-LET值曲线形状,导致其LET阈值漂移,从而影响空间错误率预估结果。The temperature(215-353 K)effect on single event upset(SEU)of a 4M commercial SRAM based on thin film transistors manufactured with a 0.15μm CMOS process was studied.The experimental results show that temperature influences can be ignored on the saturation portion of the cross-sectional curve,and the SEU cross-section increases with temperature on the rising portion of the cross-sectional curve.The influence of temperature on its space error rate prediction was studied utilizing Space Radiation 7.0 software.The simulation results show that SRAM SEU cross-section change with temperature leads to change of the shape of SEU-LET curve,and results in the threshold LET value drift,which affects the space error rate prediction result.

关 键 词：重离子 单粒子效应 单粒子翻转 温度效应 空间错误率预估 静态随机存储器 

分 类 号：O571.91[理学—粒子物理与原子核物理]