X波段FBAR用AlN薄膜制备研究  

Preparation of AlN Films for X Band FBAR Devices

作　　者：彭华东[1] 徐阳[1] 张永川[1] 杜波[1] 司美菊[1] 蒋欣[1] 赵明[1] PENG Huadong;XU Yang;ZHANG Yongchuan;DU Bo;SI Meiju;JIANG Xin;ZHAO Ming(The 26th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2019年第2期170-172,共3页Piezoelectrics & Acoustooptics

基　　金：国防基础科研计划基金资助项目(JCKY2016210B010)

摘　　要：采用中频磁控溅射法,在硅基上制备了X波段薄膜体声波谐振器(FBAR)滤波器用AlN压电薄膜。对AlN薄膜进行了分析表征,结果表明,AlN压电薄膜具有良好的(002)面择优取向,摇摆曲线半峰宽为2.21°,膜厚均匀性优于0.5%,薄膜应力为-5.02 MPa,应力可在张应力和压应力间进行调节。将该AlN薄膜制备工艺应用于FBAR器件的制作,研制出X波段FBAR器件,谐振频率为9.09 GHz,插入损耗为-0.38 dB。The aluminum nitride(AlN)films for X band film bulk acoustic resonator(FBAR)devices were grown by mid frequency magnetron sputtering on silicon substrates.The AlN films were analyzed and characterized.The results show that the AlN films have preferred orientations of(002),the full width at half maximum of the rocking curve is 2.21°.The thickness uniformity of AlN films is less than 0.5%.The film stress is -5.02 MPa,and the stress can be adjusted between tensile and compressive stress.The FBAR devices were fabricated by using this AlN film preparation process,and X-band FBAR devices with the resonator frequency of 9.09 GHz and insertion loss of -0.38 dB have been developed.

关 键 词：AlN 压电薄膜 中频磁控溅射 薄膜应力 薄膜体声波谐振器(FBAR) 

分 类 号：TN65[电子电信—电路与系统]