基于70 nm GaAs MHEMT单管芯的低噪声放大器设计  

Design of LNA with a single 70 nm GaAs MHEMT

作　　者：官劲 龚敏[1] 高博[1] 陆雨茜[1] GUAN Jin;GONG Min;GAO Bo;LU Yu-xi(Key Laboratory for Microelectronics,College of Physical Science and Technology,Sichuan University,Chengdu 610065,China;The 10th Research Institute of China Electronics Technology GroupCorporation,Chengdu 610036,China)

机构地区：[1]四川大学物理科学与技术学院微电子重点实验室,四川成都610065 [2]中国电子科技集团公司第十研究所,四川成都610036

出　　处：《电子设计工程》2019年第14期55-58,共4页Electronic Design Engineering

摘　　要：设计了一种基于70nm GaAs MHEMT(变形高电子迁移率晶体管)单管芯的宽带低噪声放大器(LNA),频率覆盖50MHz到3GHz。采用负反馈和输入输出匹配技术补偿晶体管增益随频率的滚降,以及优化稳定性和反射系数。所设计的单管芯LNA增益大约为15dB,噪声系数约为0.77dB左右。这种基于70nmGaAsMHEMT单管芯的LNA电路设计具有较高的灵活性,对于工艺验证和灵活快速实现板级LNA具有重要意义。This paper presents a broadband low noise amplifier(LNA)using 70nm GaAs metamorphic high electron mobility transistor(MHEMT)process operating from 50 MHz to 3 GHz. The feedbacks technique and input/output impedance match are applied to compensate transistor gain roll- off with frequency and optimize stability and reflection coefficients. The LNA features gain of average 15 dB,and noise figure of 0.77 dB. The design of LNA with a single 70 nm GaAs MHEMT is high flexibly,and it is of great significance to process validation and realize LNA on PCB.

关 键 词：MMIC LNA 70nm GAAS MHEMT 负反馈 宽带 

分 类 号：TN454[电子电信—微电子学与固体电子学]