Si(111)衬底上3C-SiC的超低压低温外延生长  

3C-SiC Heteroepitaxial Growth by Low Pressure Chemical Vapor Deposition on Si(111) Substrates

作　　者：严飞[1] 郑有炓[1] 陈平[1] 孙澜[1] 顾书林[1] 朱顺明[1] 李雪飞[1] 韩平[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《高技术通讯》2002年第11期65-66,11,共3页Chinese High Technology Letters

基　　金：973规划 (G2 0 0 0 0 683 );国家自然科学基金 (60 13 60 2 0 )资助项目

摘　　要：研究发展了一种Si衬底上低温外延生长 3C SiC的方法。采用LPCVD生长系统 ,以SiH4 和C2 H4 为气源 ,在超低压 (30Pa)、低温 (90 0℃ )的条件下 ,在Si(111)衬底上外延生长出了高质量的 3C SiC薄膜材料。采用俄歇能谱 (AES)、X射线衍射 (XRD)和原子力显微镜 (AFM )等分析手段研究了SiC薄膜的外延层组分、晶体结构及其表面形貌。AES结果表明薄膜中的Si/C的原子比例符合SiC的理想化学计量比 ,XRD结果显示了3C SiC外延薄膜的良好晶体结构 ,AFM揭示了 3C SiC薄膜的良好的表面形貌。C SiC was heteroepitaxially grown on Si(111) substrates by the low pressure chemical vapor deposition (LPCVD) with a gas mixture of silane, ethane and hydrogen. Under the very low pressure of 30Pa, we got good single crystalline SiC films at 900℃, much lower than the typical deposition temperature above 1200℃ found elsewhere. Their characteristics and crystallinity were examined by auger electron spectrum (AES),X ray diffraction (XRD) and atomic force spectroscopy(AFM). In the AES depth profile the film is composed of Si and C with a composition very close to that of stoichiometric SiC. The SiC peak of XRD spectrum was found at a 2θ value of 35.8°. The full width at half maximum (FWHM) is only 0.28°, indicating that the SiC film is single crystalline. The surface morphology of the film was examined by AFM. These images show the good crystalline of SiC at the surface.

关 键 词：SI(111)衬底 3C-SIC 超低压低温外延生长 碳化硅 异质外延生长 低压化学气相淀积 半导体材料 

分 类 号：TN304.05[电子电信—物理电子学]