GaN(0001)表面的电子结构研究  

Studies on electronic structure of GaN(0001) surface

作　　者：谢长坤[1] 徐法强[2] 邓锐[1] 徐彭寿[1] 刘凤琴[3] K.Yibulaxin 

机构地区：[1]中国科学技术大学结构分析开放实验室,合肥230026 [2]中国科学技术大学国家同步辐射实验室,合肥230029 [3]中国科学院高能物理研究所,北京100039

出　　处：《物理学报》2002年第11期2606-2611,共6页Acta Physica Sinica

基　　金：中国科学技术大学高水平大学建设科研基地资助的课题

摘　　要：报道了纤锌矿WZ(wurtzite)GaN(0 0 0 1)表面的电子结构研究 .采用全势线性缀加平面波方法计算得到了GaN分波态密度 ,与以前实验结果一致 .讨论了Ga3d对GaN电子结构的影响 .利用同步辐射角分辨光电子能谱技术研究了价带电子结构 .通过改变光子能量的垂直出射谱勾画沿ΓA方向的体能带结构 ,与计算得到的能带结构符合得较好 .根据沿ΓK和ΓM方向的非垂直出射谱 。An electronic structure investigation on GaN(0001) is reported: We employ a full-potential linearized augmented plane-wave(FPLAPW) approach to calculate the partial density of states, which is in agreement with previous experimental results. The effects of the Ga3d semicore levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along FA direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from our experimental data is compared well with the results of our FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GammaX and GammaM directions. Two surface states are identified, and their dispersions are characterized.

关 键 词：GAN 角分辨光电发射 全势线性缀加平面波 电子结构 能带结构 氮化镓 半导体材料 晶体生长 

分 类 号：O472.1[理学—半导体物理]