小型化锑化铟探测器制备  

The fabrication of miniaturization InSb detector

作　　者：李海燕[1] 刘佳星[1] 杜红燕[1] 杜孟新 LI Hai-yan;LIU Jia-xing;DU Hong-yan;DU Meng-xin(North China Research Institute of Electro-Optics,Beijing 100015,China;Instrumentation Technology and Economy Institute,Beijing 100055,China)

机构地区：[1]华北光电技术研究所,北京100015 [2]机械工业仪器仪表综合技术经济研究所,北京100055

出　　处：《激光与红外》2020年第1期92-95,共4页Laser & Infrared

摘　　要：随着红外探测技术的不断发展,市场对红外探测器提出了越来越多的要求,如高分辨率、高工作稳定性、低成本、小型化等,红外探测器光敏芯片的制备技术随之向大面阵、小间距方向不断探索。基于市场需求,本文从技术发展的角度,研究采用离子注入技术、干法刻蚀技术制备台面结型焦平面阵列,实现高性能、窄间距、小型化光敏芯片的制备,为未来高分辨率芯片的制备奠定技术基础。文章介绍了128×128(15μm)、128×128(10μm)两款器件的制备,两款器件中测I-V性能良好,其中,128×128(15μm)器件杜瓦封装组件后性能表现良好。With the continuous development of infrared detection technology,the market puts forwards more and more requirements to the infrared detectors,such as high resolution,high working stability,low cost,and miniaturization.So the technology for the fabrication of infrared detector photosensitive chip will be continuously explored in the direction of large array and small spacing.Based on the market demand,this paper,from the perspective of technology development,studies the use of ion implantation technology and dry etching technology to prepare the photosensitive chip,so as to achieve the preparation of high-performance,narrow spacing and miniaturized photosensitive chips,laying a technical foundation for the preparation of high-resolution chips in the future.This paper introduces the preparation of 128×128(15μm)and 128×128(10μm)devices.The I-V tests of both devices are good,the performance of Dewar encapsulated component 128×128(15μm)is good.

关 键 词：锑化铟 离子注入 干法刻蚀 

分 类 号：TN215[电子电信—物理电子学]