GaN HEMT逆压电效应及退化机理研究  

Study on Inverse Piezoelectric Effect and Degradation Mechanism in GaN HEMT

作　　者：席善斌[1,2] 裴选[1,2] 迟雷 尹丽晶[1,2] 高东阳[1,2] 彭浩 黄杰 XI Shan-bin;PEI Xuan;CHI Lei;YIN Li-jing;GAO Dong-yang;PENG Hao;HUANG Jie(The 13th Research Institute,CETC,Shijiazhuang 050051;National Semiconductor Device Quality Supervision and Inspection Center,Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《环境技术》2019年第6期50-55,共6页Environmental Technology

摘　　要：GaN HEMT器件在高压、高频、大功率应用领域中具有广泛的应用前景,但逆压电效应是其高可靠应用中面临和亟待解决的重要问题。本文系统梳理了国内外的文献报道,研究了GaN HEMT存在的逆压电效应,分析了逆压电效应导致的器件性能退化机理,定位了逆压电效应引起器件的结构损伤位置,最后给出了抑制逆压电效应的方法,以期提高GaN HEMT的可靠性。GaN HEMT device has a widely application prospect in high voltage,high frequency and high power application fields.But the inverse piezoelectric effect (IPE) is an important problem to be solved in high reliable applications.The domestic and foreign literature reported is reviewed systematically in this paper,the inverse piezoelectric effect of GaN HEMT is studied,the degradation mechanisms are analyzed,the structural damage caused by IPE is located,and the methods to suppress the IPE are also proposed,so as to improve the reliability of GaN HEMT.

关 键 词：GaN HEMT 二维电子气 压电极化 逆压电效应 临界电压 

分 类 号：TN385[电子电信—物理电子学] TN406