SiN钝化层对GaN HEMT辐射效应的影响  

Influence of SiN Passivation on Radiation Effect in GaN HEMT

作　　者：席善斌[1,2] 裴选[1,2] 迟雷 尹丽晶[1,2] 高东阳[1,2] 彭浩 黄杰 XI Shan-bin;PEI Xuan;CHI Lei;YIN Li-jing;GAO Dong-yang;PENG Hao;HUANG Jie(The 13th Research Institute,CETC,Shijiazhuang 050051;National Semiconductor Device Quality Supervision and Inspection Center,Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《环境技术》2019年第6期86-90,共5页Environmental Technology

摘　　要：GaN HEMT具有的大功率、高频率特性使其在空间应用中具有广阔的前景,GaN HEMT的空间辐射效应也引起了人们的广泛关注。然而GaN HEMT器件并没有完全体现出其材料优越的抗辐射能力,研究认为器件结构和制造工艺是导致器件和材料间抗辐射能力差距的主要原因之一。半导体制造工艺中通常采用钝化层进行隔离、保护以及调整反射率等来近一步提升器件性能,本文分析了钝化层对二维电子气(2DEG)和AlGaN/GaN异质结表面势垒高度的影响,讨论了不同钝化层结构GaN HEMT的辐射响应及退化机理,认为钝化层可有效改善GaN HEMT的抗辐射能力。AlGaN/GaN HEMTs have attracted radiation effects research interest due to their potential use in high power and high frequency space applications.However,the radiation tolerance ability of the device is not as good as the materials it used.The structure and manufacturing process is thought to be one of the primary causes of the disparity.To further improve the device performance,passivation layers is commonly integrated with the device technology.The effect of SiN passivation on twodimensional electron gas (2DEG) density and surface barrier height in AlGaN/GaN heterostructures is studied in this paper.The influence of the passivation on the radiation response of GaN HEMT and the related degradation mechanisms are discussed in detail.It is thought that the passivation can effectively enhance the radiation hardening ability of GaN HEMT.

关 键 词：GaN HEMT 辐射效应 钝化层 二维电子气 可靠性 

分 类 号：TN385[电子电信—物理电子学]