部分耗尽SOI MOSFET NBTI效应研究  

Study on NBTI Effect of PDSOI MOSFET

作　　者：王成成[1,3] 周龙达 蒲石 王芳 杨红 曾传滨[1,3] 韩郑生[1,3,5] 罗家俊[1,3] 卜建辉[1,3] Wang Chengcheng;Zhou Longda;Pu Shi;Wang Fang;Yang Hong;Zeng Chuanbin;Han Zhengsheng;Luo Jiajun;Bu Jianhui(Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;AVIC Xi'an Institute of Aeronautical Computing Technology,Xi'an 710065,China;Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Microelectronic Devices and Integrated Technology,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]航空工业西安航空计算技术研究所,陕西西安710065 [3]中国科学院硅器件技术重点实验室,北京100029 [4]中国科学院微电子器件与集成技术重点实验室,北京100029 [5]中国科学院大学,北京100049

出　　处：《航空科学技术》2020年第1期76-80,共5页Aeronautical Science & Technology

基　　金：航空科学基金(201743X2001)~~

摘　　要：NBTI效应严重影响了器件的高温可靠性,本文对基于1.2μm工艺的PDSOI器件进行了NBTI效应研究。通过加速应力试验得到了NBTI效应对PDSOI器件阈值电压漂移的影响,其主要影响因素有应力时间、温度和栅偏压。试验中通过Vg模型对PDSOI器件进行了NBTI效应寿命预测,实现了对自有1.2μm工艺PDSOI器件的高温可靠性评价。The NBTI effect seriously affects the high temperature reliability of the device.In this paper,the NBTI effect of 1.2μm process Partially Depleted Silicon On Insulator(PDSOI)device was studied.Acceleration stressing experiments were made to obtain threshold voltage shift of PDSOI device effected by NBTI.The main influencing factors are stress time,temperature and gate bias voltage.Through the Vg model,the NBTI effect lifetime of PDSOI device is estimated which can be used to evaluate the high temperature reliability of 1.2μm process PDSOI device.

关 键 词：负偏压温度不稳定性 PDSOI 快速测试方法 阈值电压 寿命预测 可靠性 

分 类 号：V240.2[航空宇航科学与技术—飞行器设计]