AlGaN/GaN HEMT的恒压电应力退化研究  

Study on Electric Stress Degradation of AlGaN/GaN HEMT Under Constant Voltage

作　　者：张璐[1] 宁静[1] 王东[1] 沈雪 董建国[1] 张进成[1] ZHANG Lu;NING Jing;WANG Dong;SHEN Xue;DONG Jianguo;ZHANG Jincheng(The National Key Discipline Laboratory of Wide Band-Gap Semiconductor,Xidian University,Xi'an 710126,P.R.China)

机构地区：[1]西安电子科技大学宽带隙半导体技术国家重点学科实验室,西安710126

出　　处：《微电子学》2020年第2期276-280,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61334002);陕西省自然科学基础研究计划资助项目(2016ZDJC-09);陕西省重点研发项目(2017ZDCXL-GY-11-03)。

摘　　要：研究了AlGaN/GaN高电子迁移率晶体管(HEMT)在不同持续恒压电应力条件下的退化机制,制作了一种AlGaN/GaN HEMT。对该器件分别采用恒压开态应力和恒压关态应力,研究了与直流特性相关的重要参数的陷阱产生规律。实验结果表明,在开态应力下,由于存在热载流子效应,发生了阈值电压正漂现象,峰值跨导降低;在关态应力下,由于存在逆压电效应,发生了阈值电压负向漂移现象。The degradation mechanism of AlGaN/GaN high electron mobility transistor(HEMT)under different sustained and constant voltage electric stresses was studied.An AlGaN/GaN HEMT device was fabricated,and the constant voltage on-state and off-state stresses were applied to the device respectively.The trap generation law was explored by comparing the important parameters related to the DC characteristics of the device.The experimental results showed that under the on-state stress,due to the hot carrier effect,the threshold voltage of the device appeared positive drift,and the peak transconductance decreased.Under the off-state stress,due to the reverse piezoelectric effect,the threshold voltage of the device appeared negative drift.

关 键 词：ALGAN/GAN HEMT 电应力退化 热载流子效应 逆压电效应 

分 类 号：TN386[电子电信—物理电子学] TN304.2