锑化铟红外焦平面器件盲元分析方法  

Blind Element Analysis Method for InSb Infrared Focal Plane Devices

作　　者：肖钰[1] 杨刚[1] 范博文 宁提[1] 刘震宇[1] XIAO Yu;YANG Gang;FAN Bo-wen;NING Ti;LIU Zhen-yu(North China Research Institute of Electron-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第1期7-10,共4页Infrared

摘　　要：提出了一种锑化铟红外焦平面器件盲元分析方法。利用该方法,无需将器件背面减薄就能进行盲元测试与分析。基于这种封装方式,将器件倒置后,从芯片正面吸收光的照射,在互连、灌胶以及每一步磨抛工艺步骤后均可进行测试和分析。结果表明,该方法能够有效地分析和定位每步工序过程中产生的盲元情况,可解决现有技术手段中对红外焦平面器件因产生盲元导致像元失效而无法准确定位其出现在哪步工艺的问题。A blind element analysis method for indium antimonide(InSb)infrared focal plane devices is proposed.By using this method,blind element testing and analysis can be performed without thinning the back of the device.Based on this packaging method,after the device is inverted,the radiation of light is absorbed from the front side of the chip,and testing and analysis can be performed after interconnection,glue filling,and each grinding and polishing process step.The results show that this method can effectively analyze and locate the blind elements generated during each step,and can solve the problem that the pixel failure in the infrared focal plane device due to the generated blind elements can not be located accurately in a certain process for the existing technical means.

关 键 词：锑化铟 盲元分析 红外焦平面器件 

分 类 号：TN215[电子电信—物理电子学]