高密度等离子体钝化层中电弧放电问题的改善  

Improvement for PA HDP Process Arcing Issue

作　　者：田守卫 孙洪福 胡海天 TIAN Shouwei;SUN Hongfu;HU Haitian(Shanghai Huahong Grace Semiconductor Manufacturing Co.,Ltd,Shanghai 201203,China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2020年第6期19-21,共3页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(1700223)。

摘　　要：分析表明,晶圆的电弧放电现象在高密度等离子体钝化层制程中时常发生,随着半导体关键尺寸的减小,电弧放电的概率明显增加,尤其表现在0.13μm及以下晶圆制造过程中。而晶圆一旦发生电弧放电,会严重影响晶圆的良率及可靠性,所以控制及降低电弧放电的概率可以减少产品的报废。根据电弧放电发生的机理,分析了在高密度等离子体钝化层制程中容易导致电弧放电的因素,从而通过增加衬底层SiO2的厚度,调整沉积钝化层的溅射率,优化整个沉积过程中的沉积溅射比率,可有效降低晶圆电弧放电发生的概率,对0.13μm及以下晶圆的改善尤为显著。Arcing often occurs in PA HDP process.As the pitch scaling down,the probability of arcing increases significantly,especially on 0.13μm and less technology node.Once arcing occurs,it will affect the wafer’s yield and reliability seriously,so controlling and reducing the probability of arcing is necessary to avoid wafer scrap.In this paper,the mechanism and factors which easily lead to arcing in PA HDP process are analyzed.By increasing the liner thickness,adjusting the sputtering rate and optimizing the DS ratio,the arcing occurrence can be reduced effectively.

关 键 词：集成电路制造 晶圆 高密度等离子体 电弧放电 钝化层 溅射率 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN792