APCVD制备SiOx薄膜工艺研究  

Study on the Preparation of SiOx Thin Films by APCVD

作　　者：云娜 康洪亮[1] 高丹[1] 佟丽英[1] YUN Na;KANG Hongliang;GAO Dan;TONG Liying(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2020年第5期29-33,共5页Equipment for Electronic Products Manufacturing

摘　　要：简单介绍常压化学气相沉积法(APCVD)制备氧化硅薄膜的基本原理和工艺。通过调整不同的沉积温度、硅烷流量、稀释氮气流量、分离氮气流量、皮带带速等工艺参数,对所沉积的氧化硅薄膜的厚度及沉积效率进行了分析研究。发现随着硅烷流量或浓度的增加,薄膜厚度增加;SiOx的膜厚与化学输入不成正比;最大沉积厚度的O2∶SiH4比与硅烷流量无关;薄膜厚度随带速的增加而减小,薄膜厚度与带速并不成正比,相同工艺温度和硅烷输入下薄膜厚度与带速的乘积是一个常数。This paper briefly introduces the basic principle of preparing SiOx thin films by APCVD(atmospheric pressure chemical vapor deposition).By adjusting the deposition temperature,silane flow rate,dilution nitrogen flow rate,separation nitrogen flow rate,belt speed and other process parameters,the thickness and deposition efficiency of the deposited silicon oxide film were analyzed.It is found that the film thickness increases with the increase of silane flow rate or concentration;the film thickness of SiOx is not directly proportional to the chemical input,the ratio of O2:SiH4 of the maximum deposition thickness has nothing to do with the silane flow rate,the film thickness decreases with the increase of the tape velocity,and the film thickness is not directly proportional to the tape velocity,and the product of film thickness and band velocity is a constant under the same process temperature and silane input.

关 键 词：常压化学气相沉积 硅烷 膜厚 流量 沉积温度 

分 类 号：TN305[电子电信—物理电子学]