基于金属辅助化学腐蚀的大高宽比硅纳米结构制备  

Preparation of High Aspect Ratio Silicon Nanostructures Using Metal Assisted Chemical Etching

作　　者：薛焱文 杨立伟 王冠亚[2] 牛洁斌[2] 刘宇[2] 李海亮[2] Xue Yanwen;Yang Liwei;Wang Guanya;Niu Jiebin;Liu Yu;Li Hailiang(College of Information and Electrical Engineering,China Agricultural University,Beijing 100083,China;Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国农业大学,信息与电气工程学院,北京100083 [2]中国科学院,微电子研究所,微电子器件及集成技术重点实验室,北京100029

出　　处：《微纳电子技术》2020年第12期1012-1016,1022,共6页Micronanoelectronic Technology

基　　金：国家重点研发计划项目(2017YFA0206002);国家自然科学基金资助项目(61804169)。

摘　　要：为了获得大高宽比的硅纳米结构,结合电子束光刻和等离子刻蚀方法制备厚度为5 nm/20 nm的Ti/Au微纳结构,然后以氢氟酸、去离子水和双氧水作为腐蚀液,利用各向异性金属辅助化学腐蚀制备大高宽比硅纳米结构,并进行了实验验证。研究了双氧水的浓度和腐蚀温度对硅纳米结构形貌的影响,分析了大高宽比硅纳米结构的金属辅助化学腐蚀机理。实验结果表明:在较低的双氧水浓度和较低的腐蚀温度下,可以形成侧壁陡直、光滑的大高宽比硅纳米结构,在纳米光栅结构和阵列结构的X射线掩模制造中显示出其优越性。基于氢氟酸、去离子水和双氧水的浓度分别为4.8、50和0.12 mol/L的腐蚀液,在2℃下进行金属辅助化学腐蚀,得到了高度为4.2μm的300 nm特征尺寸的硅纳米柱结构,对应高宽比为14∶1。In order to obtain silicon nanostructures with high aspect ratio,the Ti/Au micro/nanostructure with the thickness of 5 nm/20 nm was prepared using electron beam lithography and ion beam etching.With hydrofluoric acid,deionized water and hydrogen peroxide as the etchant solutions,silicon nanostructures with high aspect ratio were prepared by anisotropic metal assisted chemical etching.Experimental verification was also carried out.The effects of the concentration of hydrogen peroxide and etching temperature on the morphology of silicon nanostructure were investigated,and the mechanism of metal assisted chemical etching for high aspect ratio silicon nanostructures was analyzed.The experimental results show that the high aspect ratio silicon nanostructures with steep and smooth side wall can be formed at low hydrogen peroxide concentration and low etching temperature,which shows its superiority in the manufacture of X-ray masks for nanograting structures and array structures.The metal assisted chemical etching process was carried out in an etchant solution composed of hydrofluoric acid,deionized water and hydrogen peroxide(the concentrations were 4.8,50 and 0.12 mol/L,respectively)at 2℃.Silicon nanorods with a feature size of 300 nm and a height of 4.2μm were obtained,and the corresponding aspect ratio was 14∶1.

关 键 词：金属辅助化学腐蚀 电子束光刻 等离子刻蚀 硅纳米结构 大高宽比 

分 类 号：TN305.2[电子电信—物理电子学]