锑基异质结晶体管的总剂量效应和低剂量率损伤增强效应  

Effects of total ionizing dose,enhanced low-dose-rate sensitivity and irradiation annealing on antimonide based HBTs

作　　者：杨桂霞[1,2] 庞元龙[2] 王晓东 徐家云 蒋洞微 YANG Guixia;PANG Yuanlong;WANG Xiaodong;XU Jiayun;JIANG Dongwei(Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China;Institute of Nuclear Physics and Chemistry,China Academy of Engineering Physics,Mianyang 621900,Sichuan Province,China;Chongqing Saibao Industrial Technology Research Institute,Chongqing 401332,China;Institution of Microelectronics of the Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]四川大学原子核科学与技术研究所,四川成都610064 [2]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [3]重庆赛宝工业技术研究院,重庆401332 [4]中国科学院微电子研究所,北京100083

出　　处：《电子元件与材料》2021年第2期124-130,共7页Electronic Components And Materials

基　　金：国家NASF基金(U1630141);国家自然科学基金(11605169)。

摘　　要：锑化物异质结晶体管是新型的高速低功率电子器件,航天上具有良好的应用前景,但是对其耐辐照能力的研究并不深入。本文利用低频噪声和霍尔效应首次研究了分子束外延生长的锑基异质结晶体管在1.95×10^(-1) Gy·s^(-1)和1.50×10^(-2) Gy·s^(-1)低剂量率下的γ辐照效应。结果显示,在300 Gy(Si)~1500 Gy(Si)总吸收剂量范围内,表征缺陷浓度的噪声功率谱密度较之辐照前变小,辐照前后噪声功率谱密度差值随着吸收剂量的增大而缓慢增大,噪声功率谱密度、载流子迁移率和载流子浓度在不同的吸收剂量率之间没有明显差异。上述结果表明γ辐照下锑基异质结晶体管未表现出明显低剂量率损伤增强效应,虽然存在微弱的总剂量效应,但是总体而言γ辐射使得锑基异质结晶体管性能变得更为优良,其载流子迁移率较之辐照前增大了1.35%~6.48%,载流子浓度较之辐照前增大了1.43%~6.88%。Due to the high speed and low power performance,the antimonide based heterojunction bipolar transistor(Antimonide based HBT)is an alternative device for the aerospace application.However,there is few studies on its irradiation effects.In this paper,theγ-irradiation effects on Antimonide based HBTs grown by molecular beam epitaxy were studied for the first time using low-frequency noise and the Hall effect.Theγ-irradiation experiments were carried at low dose rates of 1.95×10^(-1) Gy·s^(-1) and 1.50×10^(-2) Gy·s^(-1).The results show that within a total dose range of 300 Gy(Si)-1500 Gy(Si),the noise power spectral density(SV)becomes smaller than that before irradiation.However,the difference of SV between post-irradiated and pre-irradiates sample increases slightly with the increasing dose,indicating a weak total ionizing dose effect.SV,the carrier mobility(μ),and the carrier concentration(N)have no significant change with the variation in the dose rates,showing no enhanced low-dose-rate sensitivity effect on Antimonide based HBTs.The performance of Antimonide based HBTs can be improved afterγ-irradiation annealing,asμand N increased by 1.35%-6.48% and 1.43%-6.88%,respectively.

关 键 词：分子束外延 1/f噪声 总剂量效应 低剂量率损伤增强效应 异质结双极晶体管 

分 类 号：O472.8[理学—半导体物理] V11[理学—物理]