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作 者:赵琳[1] 张晓东 李锁印[1] 韩志国[1] 吴爱华[1] ZHAO Lin;ZHANG Xiaodong;LI Suoyin;HAN Zhiguo;WU Aihua(The 13th Institute of CETC,Shijiazhuang 050051)
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《计算机与数字工程》2021年第4期644-648,共5页Computer & Digital Engineering
摘 要:为解决微电子行业内扫描电镜的计量需求,结合现有扫描电镜的计量技术文件,研究了基于线距标准样片的扫描电镜校准方法。首先,采用半导体工艺研制了用于计量扫描电镜的线距标准样片,并对样片进行了质量参数考核。其次,分析了现有检定规程的局限性,并研究了扫描电镜放大倍数示值误差、重复性、图像线性失真度等参数的实际校准方法。最后,使用自行研制且经过溯源的线距标准样片对扫描电镜在100K倍下的示值误差进行了校准实验,结果表明:自行研制样片的指标可以达到校准电镜的要求,被校电镜的示值误差在2%的范围以内,校准方法有效。In order to solve the measurement requirements of scanning electron microscopes in the microelectronics industry,combined with the existing measurement technology documents of scanning electron microscopes,a scanning electron microscope calibration method based on line spacing standard samples is studied.First of all,the semiconductor technology is used to develop a standard sample for measuring the line distance of the scanning electron microscope,and the quality parameter assessment of the sample is carried out.Secondly,the limitations of the existing verification procedures are analyzed,and the actual calibration meth⁃ods for parameters such as the error of the magnification of the scanning electron microscope,the repeatability,and the linear distor⁃tion of the image are studied.Finally,a self-developed and traceable line distance standard sample is used to calibrate the indica⁃tion error of the scanning electron microscope at 100K times.The results show that the index of the self-developed sample can meet the requirements of the calibration electron microscope,and the indication value of the calibrated electron microscope.The calibra⁃tion method is effective if the error is within 2%.
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