栅极面积和ESD结构对AlGaN/GaN MIS-HEMTs中LPCVD-SiNx栅介质TDDB特性的影响  

Impact of Gate Erea and ESD Structure on LPCVD SiN Gate Dielectric TDDB Characteristics in AlGaN/GaN MIS-HEMTs

作　　者：戚永乐 王登贵 周建军[1] 张凯[1] 孔岑[1] 孔月婵[1] 于宏宇 陈堂胜[1] QI Yongle;WANG Denggui;ZHOU Jianjun;ZHANG Kai;KONG Cen;KONG Yuechan;YU Hongyu;CHEN Tangsheng(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Southern University of Science and Technology,Guangdong,518055,CHN)

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016 [2]南方科技大学,广东深圳518055

出　　处：《固体电子学研究与进展》2021年第3期229-234,共6页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2017YFB0402800,2017YFB0402802)。

摘　　要：基于CMOS兼容性GaN工艺,研制出具有低压化学气相沉积SiNx栅介质的硅基AlGaN/GaN异质结金属-绝缘层-半导体高电子迁移率晶体管(MIS-HEMTs)器件。通过威布尔统计分析,研究了栅介质面积和静电释放(ESD)结构对SiNx的经时击穿(TDDB)特性的影响。结果表明,较小的栅介质面积有利于更长的器件寿命,而ESD保护结构有利于提升器件栅介质在高电压应力下的可靠性和稳定性,主要原因为SBD的寄生电容可有效吸收电脉冲感应在介质薄膜中产生的电荷。最后,通过线性E模型预测具有35 nm厚LPCVD-SiNx栅介质的AlGaN/GaN MIS-HEMTs在栅极电压为13 V条件下的击穿寿命可达20年(0.01%,T=25℃)。Si-based AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MIS-HEMTs)with low-pressure chemical vapor deposition(LPCVD)SiNxgate dielectrics were fabricated via CMOS compatible GaN process. Evaluated via Weibull statistics,the effect of gate dielectric area and Electro-Static discharge(ESD)structure on SiNx time-dependent dielectrics breakdown(TDDB)characteristics was fully studied. It is found that smaller gate dielectric area is beneficial to longer lifetime,while ESD structure can be used to significantly improve the lifetime uniformity of GaN devices,which might be ascribed to the diode induced parasitic capacitance. Finally,we predict that AlGaN/GaN MIS-HEMTs with 35 nm-thick LPCVD SiNx gate dielectrics can run under a positive gate voltage(VGS)of 13 V for a 20-year time-to-breakdown lifetime(0.01%,T=25℃).

关 键 词：氮化镓金属-绝缘层-半导体高电子迁移率晶体管 栅介质 静电释放结构 经时击穿 

分 类 号：TN386[电子电信—物理电子学] TN306