单粒子翻转效应的FPGA模拟技术  

FPGA Emulation Technology for Single Event Upset

作　　者：陈鑫[1] 施聿哲 白雨鑫 陈凯 张智维 张颖[1] CHEN Xin;SHI Yuzhe;BAI Yuxin;CHEN Kai;ZHANG Zhiwei;ZHANG Ying(College of Electronic and Information Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China)

机构地区：[1]南京航空航天大学电子信息工程学院,南京210016

出　　处：《电子与封装》2021年第9期66-72,共7页Electronics & Packaging

基　　金：模拟集成电路重点实验室基金(61428020304);国家自然科学基金(61106029,61701228);航空科学基金(20180852005)。

摘　　要：随着半导体工艺节点遵循摩尔定律逐渐缩小,空间环境中辐射诱发的单粒子效应(Single Event Effect,SEE)对集成电路造成的影响却在不断增加。单粒子翻转(Single Event Upset,SEU)效应是最为普遍的单粒子效应,表现为电路存储单元和时序逻辑中的逻辑位翻转,在集成电路中常采用故障注入技术来模拟单粒子翻转效应。因此,重点研究了目前较为常用的3种故障注入技术,分别是现场可编程门阵列(Field Programmable Gate Array,FPGA)重配置,扫描链和旁路电路,分析了各自的优势和不足,并对未来的发展趋势进行了预测。Following Moore's law,the character size of semiconductor process node is decreasing,and the impact of radiation-induced single event effect(SEE)on integrated circuits is increasing.The single event upset(SEU)effect,which represents the bit flip in the memory cell and sequential logic,has a higher probability of occurrence in SEE.Fault injection technique is often adopted to emulate SEU effect in integrated circuit.Therefore,three fault injection technologies which are dynamic reconfiguration,scan chain and bypass circuit are studied.In addition,the advantages and disadvantages of these methods are also analyzed.The general trend of field programmable gate array(FPGA)emulation technology is made at last.

关 键 词：单粒子效应 单粒子翻转 超大规模集成电路 FPGA模拟 故障注入 

分 类 号：TN47[电子电信—微电子学与固体电子学]